Magnonic Combinatorial Memory based on a network of coupled active ring circuits

Abstract

Magnonic Combinatorial Memory (MCM) is a type of memory where the bits of information are encoded in the signal propagation paths in the network. In this work, we consider MCM based on the network of a coupled active ring circuit (ARC). Each circuit includes a broadband amplifier, a magnonic delay line, an adjustable frequency filter, an adjustable phase shifter, and a power detector. The coupling between the circuits is via spin waves propagating in the common delay line - ferrite film. There may or may not be auto-oscillations in the active ring circuits, depending on the combination of circuit parameters and circuit coupling. The address of MCM is defined as the combination of the states of the phase shifters and frequency filters, while the MCM state is defined as the presence/absence of the auto-oscillations. The coupling between the circuits is achieved by placing micromagnets on top of the ferrite film. The number of bits that can be encoded in the network increases quadratically with the number of coupled circuits. This scaling provides a fundamental advantage over conventional memory. We present experimental data obtained for three magnonic ARCs connected via a single-crystal yttrium iron garnet Y3Fe2(FeO4)3 (YIG) film. The data illustrate an example of encoding a 27-bit binary response pattern, corresponding to the 27 experimentally accessible phase combinations. The results demonstrate a robust operation of MCM with an On/Off ratio exceeding 30 dB at room temperature. The advantages and shortcomings of the proposed approach are discussed.