Zonal dislocations in Laves phases: A coupled synchro-shear slip mechanism
Sang-Hyeok Lee, Mariano Forti, Thomas Hammerschmidt, Gang Liu, Julien Guénolé, Siyuan Zhang, Gerhard Dehm, Sandra Korte-Kerzel, Zhuocheng Xie
Abstract
Synchro-shear is the primary plastic deformation mechanism in Laves phases at elevated temperatures, mediated by synchro-Shockley partial dislocations-zonal dislocations that proceed via localized events such as kink-pair nucleation and propagation. Using atomistic simulations, we identified a novel slip mechanism in Laves phases, namely coupled synchro-shear slip, involving the synchronized glide of two synchro-Shockley partial dislocations on adjacent slip planes, leading to the formation of extrinsic stacking faults. High-resolution scanning transmission electron microscopy revealed the extended core structures consistent with coupled synchro-Shockley partial dislocations bounded by extrinsic stacking faults in C15 NbCr2 and their involvement in twinning. These results highlight the critical role of coupled synchro-shear slip in enabling phase transformations between Laves polytypes and in governing twinning behavior, providing new atomistic insight into the kinetic nature of plasticity in topologically close-packed intermetallic phases.
Create a lesson
Related papers
A Gaussian process coarse-grained potential for Na-montmorillonite
Yalda Pedram, Yaoting Zhang, Laurent Brochard et al.
First-principles theory of phonon renormalization from nonlinear electron-phonon interactions
Florian Kluibenschedl, Matthew Houtput, Jacques Tempere et al.
Spin-Lattice Dynamics and Interactions in Magnonic Spinels
Hari Paudyal, Yuri Suzuki, Michael E. Flatté et al.
Magnon-Phonon Dynamics in Multidimensional Antiferromagnetic Oxides
Yogendra Limbu, Michael E. Flatté, Durga Paudyal
Strain-Induced Metal-to-Insulator Transition in Antiferromagnetic SrCrO3 Thin Films
S. Jöhr, A. Carta, J. Moreno et al.
Tuning the Coercive Field in Ferroelectric Hf0.5Zr0.5O2-Al2O3 Heterostructures via Interfacial Charge Dynamics
Marshall B. Frye, Chanyoung Kim, Jeong-Woo Sun et al.