Thermally stimulated depolarization in hafnium oxide: experiment and numerical simulation
Yu. N. Novikov, D. E. Temnov, E. A. Volgina, M. S. Lebedev, V. A. Gritsenko
Abstract
This paper presents an experimental and theoretical study of thermally stimulated depolarization (TSD) in hafnium oxide. Three different models for the probability of trap ionization are considered: the Frenkel effect and two variants of the multiphonon trap ionization mechanism, the multiphonon ionization mechanism of isolated traps at low trap concentrations and phonon-assisted tunneling between neighboring traps at high trap concentrations. The best agreement between the TSD experiment and theory is observed for the multiphonon ionization mechanism of isolated traps. Similar thermal energies of electron and hole traps in HfO2 are obtained ~ 1.3 eV.
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