Enhancement of the Topological Hall Effect through Engineering the Skyrmion Size and Shape

Abstract

The topological Hall effect of skyrmions is a promising electrical probe of magnetic textures, but its small magnitude limits applications. In this work, we theoretically investigate the topological Hall effect induced by sparsely distributed skyrmions in the weak-coupling limit, focusing on how the size and shape of the skyrmion affect the Hall effect. To this end, we used a formalism based on angular-momentum eigenstates, which enables systematic analysis within reasonable computation time. We found that, in clean materials where the electron mean-free path is comparable to or larger than the skyrmion size, the Hall effect depends considerably on the size and shape of the skyrmion. In particular, the Hall effect is largest when $k_Fλ\sim 1$, and its magnitude can be tuned by the domain-wall width of skyrmions. These findings provide a basis for investigating how the shape and size of skyrmions affect transport properties and demonstrate that the topological Hall effect is controllable by engineering these properties.