A rhombic spin-1 interpretation of a room-temperature GaN emitter
Daniel Hashemi
Abstract
Single defects in GaN show optically detected magnetic resonance at room temperature. In the more abundant class, a minimal S=3/2 model leaves a g≈ 4 line unexplained. For one defect, this line lies near the sum of the two outer lines, consistent with transitions among three shared levels. A rhombic S=1 model reproduces the three line positions with rms errors of 8.1-9.8 MHz. The tested second-order S=3/2 fits containing all three transitions and the published minimal model do not reproduce these positions. A ladder fitted to the strong lines remains viable if the g≈ 4 line is a separate transition near the sum of the outer two. An unresolved frequency-window shift prevents the existing data from establishing the S=1 assignment uniquely. We propose a zero-field sweep that directly tests the isolated S=1 assignment.
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