Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. VII. Step kinetics

Abstract

Ab initio calculations were used to simulate the kinetics of attachment of new segments of the crystalline lattice (pyramids) at steps on the nonmetal-terminated surface of tetrahedral semiconductors: GaN, GaP, GaAs and GaSb. These surfaces are wurtzite gallium nitride, i.e. GaN(000-1) surface, zinc blende gallium phosphide, i.e. GaP(-1-1-1) gallium arsenide, GaAs(-1-1-1) and gallium antimonide GaSb(-1-1-1) surfaces. Diffusion species are gallium adatoms at high coverage or gallium adatoms connected with nonmetal atom creating stable pyramids. These pyramids arrive at the steps, and cannot be attached be directly because the Ga adatom at the pyramid base cannot be attached directly. Therefore they are incorporated into the step by additional nonmetal atoms glue atoms arriving from the vapor or detached from other segments of the surface terraces.