Millikelvin magnetometry up to 30~T using a multi-cross micro-Hall sensor
Bingbing Tong, Yinina Ma, Zhenhua Zhao, Shuyu Zheng, Li Lu, Peijie Sun, Gang Li
Abstract
We report a multi-cross micro-Hall sensor fabricated from an MBE-grown GaAs/AlGaAs heterostructure for high-sensitivity magnetometry. The device enables dc magnetization measurements at temperatures down to 15~mK and in dc magnetic fields up to 30 T. Bulk samples with dimensions ranging from 100~μm to 1~mm can be measured with a resolution better than 1~μT with a 1~μA excitation at 13.77 Hz. Test-of-performance measurements were carried out by probing the field-dependent magnetization plateaus of the triangular-lattice quantum magnet K2Co2(SeO3)3 at 20~mK, the antiferromagnetic transition of K3GdTe2O9 near 220 mK via temperature-dependent magnetization, and the quantum oscillations in a ruthenium single crystal. A simple and reliable sample-mounting setup that ensures reproducible magnetic measurements is provided.
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