Interfacial polarity control of anomalous Hall effect in LaCoO3-SrIrO3 heterostructures

Abstract

Interfacial polarity in oxide heterostructures can drive robust charge redistribution across the interface, yet its role in tailoring topological transport phenomena like the anomalous Hall effect (AHE) remains largely unexplored. Here, we control the sign of polarity-induced charge in SrIrO3-LaCoO3 interfaces by independently engineering the layer stacking sequence and the atomic termination. In-situ angle-resolved photoemission spectroscopy directly confirms the sign reversal of the induced charge in SrIrO3 through the contrasting electronic band shifts between different interfacial configurations. Magneto-transport measurements across a systematic matrix of four distinct heterostructures reveal that the AHE can be cleanly toggled on and off: it emerges exclusively under electron-doped conditions, while remaining suppressed for hole-doped SrIrO3. Our results establish that this response originates from an intrinsic, Berry-curvature-driven mechanism governed by polarity-controlled band filling of SrIrO3. These findings shift interfacial polarity from a passive structural consequence to an active design variable for engineering topological quantum states in oxide heterostructures.