Quantum Dot Self-assembly in Growth of Strained-Layer Thin Films: a Kinet ic Monte-Carlo Study
K. E. Khor, S. Das Sarma
Abstract
We use Monte-Carlo simulations to study island formation in the growth of thin semiconducting films deposited on lattice-mismatched substrates. It is known that islands nucleate with critical nuclei of about one atom and grow two dimensionally until they reach a critical size sc, when it is favorable for the islands to become three dimensional. We investigate the mechanism for this transition from two-dimensional(2D) to three-dimensional(3D) growth. Atoms at the edge of 2D islands with the critical size sc become mobile as a result of strain and are promoted to the next level. Edge atoms of the resulting island remain highly strained and are promoted to the higher layers in quick succession. This process of depletion is rapid and occurs at a sharply defined island size. We discuss why this leads to the uniformity seen in self-assembled quantum dots in highly mismatched heteroepitaxy
Create a lesson
Related papers
Necessary conditions for benchmarking next-generation AI in materials discovery
Daniel E Widdowson, Tatiana V Kurlina, Olga D Anosova et al.
Doubly Metastable Synthesis for Accelerated Quantum Materials Discovery
Kyuho Lee, Berit H. Goodge, Soonhyun Kwon et al.
Phononic Frequency Combs in Twisted Bilayer Transition Metal Dichalcogenide Heterostructures from First Principles
Naman Arora, Adarsh Ganesan
Improved screening of doped ZrO2 catalysts for CO2 hydrogenation from graph-based machine learning
Karsten Walz Jensen, Mie Andersen, Raffaele Cheula
Dislocation mediated twin boundary faceting in β-Sn
John Israel, Ian Chesser, Khanh Dang et al.
Ferroelectric Domain-Wall Motion, Stability, and Frequency Responses under Different Screening-Charge Conservation Laws
Sergei V. Kalinin