Interface charged impurity scattering in semiconductor MOSFETs and MODFETs: temperature dependent resistivity and 2D "metallic" behavior
S. Das Sarma, E. H. Hwang, Igor Zutic
Abstract
We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing experimental data in several different systems and address the origin of the strong and non-monotonic temperature dependent resistivity.
Create a lesson
Related papers
A new approach to the Kondo effect: sophomore's dream function and Lee-Yang zeros
V. Yu. Irkhin
Temperature evolution of spin dynamics in extended Kitaev models within an Abrikosov fermion theory beyond mean field
Daiki Sasamoto, Joji Nasu
Interplay of disorder and spin liquid physics in the triangular-lattice antiferromagnet YbZn2GaO5
Hafsa Zeroual, Shams Sohel Islam, Toni Shiroka et al.
X-ray absorption spectroscopic studies of oxygen-deficient double perovskite oxide NdBaCo2O5+δ (δ 0.65)
Himanshu Pant, S. Khalid, R. Bindu
Odd-Parity Crystalline Electric Field and Multipoles in Icosahedral Quasicrystal and Approximant: Magnetic Toroidal and Electric Dipoles in Ce-Based Systems
Shinji Watanabe, Syunta Furuya, Mitsuaki Kawamura
Real-Time Relaxation Dynamics of Dark Excitons in Mirror-Symmetric Monolayers
Rishabh Saraswat, Mantasha Ansari, Rekha Verma et al.