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Thermopower in p-type GaAs/AlGaAs layers

M. Tsaousidou, P. N. Butcher, P. A. Crump, R. J. Hyndman, B. L. Gallagher

cond-matarXiv:cond-mat/0004274

Abstract

We explain for the first time thermopower data for p-type GaAs/AlGaAs layers. The data span a temperature range between 0.2 to 1.2K. We calculate both the diffusion Sd and the phonon-drag Sg contributions to the thermopower. We find that Sd is significant for temperatures up to 0.3K while at higher temperatures Sg dominates. The calculated and measured Sg agree very well with no adjustable parameters.

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