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Interlayer tunneling in double-layer quantum Hall pseudo-ferromagnets

Leon Balents, Leo Radzihovsky

cond-mat.mes-hallarXiv:cond-mat/0006450

Abstract

We show that the interlayer tunneling I--V in double-layer quantum Hall states displays a rich behavior which depends on the relative magnitude of sample size, voltage length scale, current screening, disorder and thermal lengths. For weak tunneling, we predict a negative differential conductance of a power-law shape crossing over to a sharp zero-bias peak. An in-plane magnetic field splits this zero-bias peak, leading instead to a ``derivative'' feature at VB(B||)=2π v B||d/eϕ0, which gives a direct measure of the dispersion of the Goldstone mode corresponding to the spontaneous symmetry breaking of the double-layer Hall state.

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