Substrate Sensitivity of the Adhesion and Material Properties of RF-Pecvd Amorphous Carbon

Abstract

Hydrogenated amorphous carbon (a-C:H), deposited by the rf-plasma enhanced chemical vapour deposition (rf-PECVD) technique, is a promising material for large area electronic and interlayer dielectric applications. The structural and electronic properties of rf-PECVD a-C:H, deposited at room temperature from CH4/He and CH4/Ar gas mixtures, are shown to be sensitive to the substrate on which the thin film is deposited. The choice of substrate (c-Si or C7059 glass), and the existence and geometrical dimensions of any metallic pattern on the substrate surface, can result in significant spatial variations in the a-C:H adhesion and material properties. The observed effects are attributed to potential variations across the metal patterned substrates which influence the 'local' dc self-bias. This leads to spatial variations in the growth conditions and hence material properties. For electronic device and dielectric isolation applications this effect can result in significant variations in operating performance. The nature of the substrate and any overlying metallisation pattern are therefore important considerations.