Confinement symmetry, mobility anisotropy, and metallic behavior in (311)A GaAs 2D holes
S. J. Papadakis, E. P. De Poortere, M. Shayegan
Abstract
We study two dimensional hole systems confined to GaAs quantum wells grown on the (311)A surface of GaAs substrates. Such samples exhibit an in-plane mobility anisotropy. At constant 2D hole density, we vary the symmetry of the quantum well potential and measure the temperature dependence of the resistivity along two different current directions, in a regime where the samples exhibit metallic behavior. The symmetry has a significant and non-trivial effect on the metallic behavior. Moreover, differences between the temperature-dependence of the resistivity along the two mobility directions point to specific scattering mechanisms being important in the expression of the metallic behavior.
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