Large two-level magnetoresistance effect in doped manganite grain boundary junctions
J. B. Philipp, C. Hoefener, S. Thienhaus, J. Klein, L. Alff, R. Gross
Abstract
We performed a systematic analysis of the tunneling magnetoresistance (TMR) effect in single grain boundary junctions formed in epitaxial La(2/3)Ca(1/3)MnO(3) films deposited on SrTiO(3) bicrystals. For magnetic fields H applied parallel to the grain boundary barrier, an ideal two-level resistance switching behavior with sharp transitions is observed with a TMR effect of up to 300% at 4.2 K and still above 100% at 77 K. Varying the angle between H and the grain boundary results in differently shaped resistance vs H curves. The observed behavior is explained within a model of magnetic domain pinning at the grain boundary interface.
Create a lesson
Related papers
SrMn2Ge2: A metallic system with anomalous magnetotransport properties
A. van der Spuy, R. Warmbier, A. M. Strydom et al.
Hidden Triakontadipole Order in the Triangular-Lattice Magnet CeMgAl11O19
Yu-Bo Liu, Yuan Gao, Zhen Ma et al.
Closed- and open-system characterization of the Yukawa-SYK model in real time
Alex Windey, Christian H. Johansen, Philipp Hauke et al.
Small-data physics-informed ML model for magnetic exchange based on chemical composition and structure
Brice Kengni Zanguim, Thibaut Véry, Marie-Bernadette Lepetit
Thermodynamic Evidence for Multiple Field-Induced Phases in an Anisotropic Kagome Antiferromagnet
M. Schuchard, Q. Barthélemy, C. Marcenat et al.
Spin-orbit-locked symmetry and the stability of the triangular Dirac spin liquid in the ytterbium delafossites
Yasir Iqbal