Zero-Bias States and the Mechanism of the Surface d->d+is Transition
Simon Kos
Abstract
We study the physical mechanism of the surface d->d+is transition proposed as the interpretation of results of tunneling experiments into ab planes. We base our argument on first-order perturbation theory and show that the zero-bias states drive the transition. We support the argument by various estimates and consistency checks.
Create a lesson
Related papers
Ta-based S-I-S junctions for integrated superconducting Electronics
Trent Borman, Cameron Bullock, Cole Chason et al.
Nonreciprocal charge transport in quantum materials: From superconductors to magnetic systems
Boning Yu, Yalei Huang, Alltrin Dhanarajagopal et al.
Intra-unit-cell Josephson scanning tunneling spectroscopy of the cuprate Bi1.2Pb0.8Sr2CaCu2O8+δ
Fengyu Yao, Jiong Mei, Wenjin Mao et al.
Constraining the Superconducting Gap of Monolayer FeSe/SrTiO3 via Statistical Analysis and Tip-Height-Dependent Tunneling Spectroscopy
Dongwon Shin, Xiyou Peng, Kaleb McClure et al.
Acoustic damping limits superfluid helium as a thermal bath for mechanical resonators
Yunhu Huang, Mehri Ebrahimi, Alireza Rashedi et al.
Superinsulation, electric confinement in condensed matter
M. Cristina Diamantini, Carlo A. Trugenberger