Bandgap recovery and electron doping on cleaved [100] surfaces of divalent semi-metal hexaborides

Abstract

This paper has been withdrawn by the authors due to new theoretical evidence and experimental proof that the semiconducting bandgap reported in this paper and ascribed to a surface region is in fact a bulk property of divalent hexaborides. As reported in J. D. Denlinger et al., cond-mat/0107429, which supercedes this paper, bulk-sensitive boron K-edge soft x-ray emission provides a complementary confirmation of the X-point band gap identified by angle-resolved photoemission.