Resonant tunneling through zero-dimensional impurity states: Effects of a finite temperature

Abstract

We have performed temperature dependent tunneling experiments through a single impurity in an asymmetric vertical double barrier tunneling structure. In particular in the charging direction we observe at zero magnetic field a clear shift in the onset voltage of the resonant tunneling current through the impurity. With a magnetic field applied the shift starts to disappear. The experimental observations are explained in terms of resonant tunneling through a spin degenerate impurity level.