Influence of nano-mechanical properties on single electron tunneling: A vibrating Single-Electron Transistor
Daniel Boese, Herbert Schoeller
Abstract
We describe single electron tunneling through molecular structures under the influence of nano-mechanical excitations. We develop a full quantum mechanical model, which includes charging effects and dissipation, and apply it to the vibrating C60 single electron transistor experiment by Park et al. [Nature 407, 57 (2000)]. We find good agreement and argue vibrations to be essential to molecular electronic systems. We propose a mechanism to realize negative differential conductance using local bosonic excitations.
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