Analysis of the temperature-dependent quantum point contact conductance in view of the metal-insulator transition in two dimensions
V. Senz, T. Heinzel, T. Ihn, S. Lindemann, R. Held, K. Ensslin, W. Wegscheider, M. Bichler
Abstract
The temperature dependence of the conductance of a quantum point contact has been measured. The conductance as a function of the Fermi energy shows temperature-independent fixed points, located at roughly multiple integers of e2/h. Around the first fixed point at e2/h, the experimental data for different temperatures can been scaled onto a single curve. For pure thermal smearing of the conductance steps, a scaling parameter of one is expected. The measured scaling parameter, however, is significantly larger than 1. The deviations are interpreted as a signature of the potential landscape of the quantum point contact, and of the source-drain bias voltage. We relate our results phenomenologically to the metal-insulator transition in two dimensions.
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