Factors Responsible for the Stability and the Existence of a Clean Energy Gap of a Silicon Nanocluster

Abstract

We present a critical theoretical study of electronic properties of silicon nanoclusters, in particular the roles played by symmetry, relaxation, and hydrogen passivation on the the stability, the gap states and the energy gap of the system using the order-N [O(N)] non-orthogonal tight-binding molecular dynamics and the local analysis of electronic structure.