Self-Assembled InAs Quantum Dots on Patterned InP Substrates
J. Lefebvre, P. J. Poole, J. Fraser, G. C. Aers, D. Chithrani, R. L. Williams
Abstract
The size distribution of self-assembled InAs quantum dots grown on (001) InP under the Stranski-Krastanow growth mode is controlled using selective area/chemical beam epitaxy, which allows the formation of quantum dots at specific locations. As the dimensions of the patterned areas are decreased from 1000 nm down to 50 nm or less, scanning electron microscopy reveals a gradual increase in the spatial correlation between quantum dots, which leads to the formation of ordered arrays for dimensions below 200 nm.
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