Bosonization Theory of Excitons in One-dimensional Narrow Gap Semiconductors
H. C. Lee, S. -R. Eric Yang
Abstract
Excitons in one-dimensional narrow gap semiconductors of anti-crossing quantum Hall edge states are investigated using a bosonization method. The excitonic states are studied by mapping the problem into a non-integrable sine-Gordon type model. We also find that many-body interactions lead to a strong enhancement of the band gap. We have estimated when an exciton instability may occur.
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