Dissimilar Ferromagnetic Layer Dependence of Hot Electron Magnetotransport

Abstract

The material dependence of hot electron magnetotransport in a spin-valve transistor has been theoretically explored. We calculate the parallel and anti-parallel collector current changing the types and relative spin orientation of the ferromagnetic layers. The magnetocurrent has been presented as well. In this calculations, spin dependent self energy effect of hot electron in ferromagnetic materials has been taken into account. The results show that the magnetotransport property strongly depends on the combination of different ferromagnetic metal layers since the hot electron has different inelastic scattering strength in each material, and the hot electron spin polarization enters importantly into the magnetocurrent at finite temperatures. This calculations may suggest the guide for searching the best structural combination of hot electron magnetoelectronic device such as a spin-valve transistor.