Single ion anisotropy of Mn doped GaAs measured by EPR
O. M. Fedorych, E. M. Hankiewicz, Z. Wilamowski, J. Sadowski
Abstract
Electron paramagnetic resonance (EPR) study of MBE grown Mn doped GaAs is presented. The resolved fine structure allows us to evaluate the crystal field parameters of the spin Hamiltonian. The obtained cubic constant is a= -14.1 10-4/cm. The axial field parameter, D, increases with Mn concentration, x, i.e., with the strain of (Ga,Mn)As layers. Extrapolation of D shows that the single ion anisotropy is the important contribution to the magnetic anisotropy which is observed in ferromagnetic layers with greater Mn concentrations. The analysis of the EPR linewidth shows that native defects of the concentration of 5 1019/cm3, but not the Mn ions, are the main origin of crystal field fluctuations.
Create a lesson
Related papers
Knots in Condensed Matters
Y. M. Cho
Bouchaud's model exhibits two different aging regimes in dimension one
Gerard Ben Arous, Jiri Cerny
Periodic diffraction patterns for 1D quasicrystals
Pawel Buczek, Lorenzo Sadun, Janusz Wolny
Adiabatic association of ultracold molecules via magnetic field tunable interactions
Krzysztof Goral, Thorsten Koehler, Simon A. Gardiner et al.
High-Temperature Atomic Superfluidity in Lattice Boson-Fermion Mixtures
F. Illuminati, A. Albus
Constructive Methods of Invariant Manifolds for Kinetic Problems
A. N. Gorban, I. V. Karlin, A. Yu. Zinovyev