The influence of the mutual drag of carrier-phonon system on the thermopower and the transverse Nernst-Ettingshausen effect

Abstract

The thermopower and Nernst-Ettingshausen (NE) effect in degenerate semiconductors and semimetals placed in high electric and magnetic fields are calculated by taking into account the heating of both electrons and phonons as well as their thermal and mutual drags. The magnetic and electric field dependences of the thermoelectric power and the transverse NE voltage are found in analytical forms. It is shown that in weak and high transverse magnetic fields, the electronic and phonon parts of NE coefficients change their sign for some scattering mechanisms.