Hole Mobility And Scattering Mechanism on Undoped MOCVD Grown of GaSb

Abstract

The temperature variation of partial mobility and effective mobility for undoped p-GaSb have been calculated using Matthiessen rule. The effective mobility depends on the ionized, acoustic, polar optical and non-polar optical scattering processes. The analysis shows that the effective mobility for undoped p-GaSb at room temperature is about 905 cm^2/Vs with the hole concentration of about 10^16 cm^-3. The dependence of mobility on the hole concentration at 300 K has been analyzed and shows that mobility decreases with increasing hole concentrations. The result of this analysis then is used to analyze the electronic properties of thin film undoped p-GaSb which grown by MOCVD method. The films have been characterized using Hall-Van der Pauw method to determine the mobilities and hole concentrations. Comparison between experimental data and the theoretical analysis shows that the films have the high level of impurities. Therefore the four scattering mechanisms are governed the hole mobility of undoped p-GaSb at room temperature.