Optical excitation of interacting electron-hole pairs in disordered one-dimensional semiconductors

Abstract

We apply the optimal fluctuation method to the calculation of the optical absorption in disordered one-dimensional semiconductors below the fundamental optical gap. We find that a photon energy exists at which the shape of the optimal fluctuation undergoes a dramatic change, resulting in a different energy dependence of the absorption rate above and below this energy. In the limit when the interaction of an electron and a hole with disorder is stronger than their interaction with each other, we obtain an analytical expression for the optical conductivity. We show that to calculate the absorption rate, it is, in general, necessary to consider a manifold of optimal fluctuations, rather than just a single fluctuation. For an arbitrary ratio of the Coulomb interaction and disorder, the optimal fluctuation is found numerically.