Spin-polarized Zener tunneling in (Ga,Mn)As
E. Johnston-Halperin, D. Lofgreen, R. K. Kawakami, D. K. Young, L. Coldren, A. C. Gossard, D. D. Awschalom
Abstract
We investigate spin-polarized inter-band tunneling through measurement of (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to the conduction band of an adjacent n-GaAs layer. The resulting current is monitored by injection into a quantum well light emitting diode whose electroluminescence polarization is found to track the magnetization of the (Ga,Mn)As layer as a function of both temperature and magnetic field.
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