Electronic phase separation in lightly-doped La2-xSrxCuO4
M. Matsuda, M. Fujita, K. Yamada, R. J. Birgeneau, Y. Endoh, G. Shirane
Abstract
The hole concentration dependence of the magnetic correlations is studied in very lightly-doped La2-xSrxCuO4 (x<0.02), which shows coexistence of a three-dimensional antiferromagnetic (AF) long-range ordered phase and a spin-glass phase at low temperatures. It is found that the spin-glass phase in the coexistence region also shows a diagonal spin modulation as in the pure spin-glass phase in La2-xSrxCuO4 (0.02 x0.055). Below x0.02 the diagonal stripe structure is the same as that in x0.02 with a volume fraction almost proportional to hole concentration, suggesting that electronic phase separation of the doped holes occurs so that some regions with hole concentration hc0.02 and the rest with hc0 are formed. This result also indicates that the transition between the AF and spin-glass phase around x=0.02 is first order.
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