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Optical Method for Determination of Carrier Density in Modulation Doped Quantum Wells

G. V. Astakhov, V. P. Kochereshko, D. R. Yakovlev, W. Ossau, J. Nurnberger, W. Faschinger, G. Landwehr, T. Wojtowicz, G. Karczewski, J. Kossut

cond-mat.str-elarXiv:cond-mat/0111593

Abstract

An optical method is suggested to determine the concentration of two-dimensional electrons in modulation-doped quantum wells at low and moderate electron densities between 109 and 2x1011 cm-2. The method is based on an analysis of magneto-reflectivity spectra of charged excitons (trions). The circular polarization degree and the oscillator strength of the charged excitons contain information about the density and spin polarization of two-dimensional electron gas. The method is applied to CdTe/(Cd,Mg)Te and ZnSe/Zn,Mg)(S,Se) heterostructures.

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