Comment on low-temperature transport properties of non-stoichiometric La0.95-xSrxMnO3
E. Rozenberg, M. Auslender
Abstract
In a recent paper (Michalopolou A., Syskakis E. and Papastaikoudis C., 2001 J. Phys.: Cond. Mat. 13, 11615) the authors reported on the measurements of electrical resistivity and specific heat at zero magnetic field carried out on polycrystalline non-stoichiometric La0.95-xSrxMnO3 manganites.In particular, they attributed the low temperature behavior of resistivity (shallow minimum and slight upturn at lowest temperatures) to 3D electron-electron interaction enhanced by disorder, using results of numerical fittings of the dependencies of resistivity on temperature in the interval 4.2 -- 40 K. We argue that such an analysis may be not valid for polycrystalline manganites where relatively strong grain boundary effects might mask weak contribution of quantum effects to low temperature resistivity. The crucial test of applicability of the theory of quantum corrections to conductivity in this case is the resistive measurements under non-zero magnetic field.
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