Mesoscopic proximity effect in double barrier Superconductor/Normal Metal junctions
D. Quirion, C. Hoffmann, F. Lefloch, M. Sanquer
Abstract
We report transport measurements down to T=60mK of SININ and SNIN structures in the diffusive limit. We fabricated Al-AlOx/Cu/AlOx/Cu (SININ) and Al/Cu/AlOx/Cu (SNIN) vertical junctions. For the first time, a zero bias anomaly was observed in a metallic SININ structure. We attribute this peak of conductance to coherent multi-reflections of electrons between the two tunnel barriers. This conductance maximum is quantitatively fitted by the relevant theory of mesoscopic SININ structures. When the barrier at the SN interface is removed (SNIN structure), we observe a peak of conductance at finite voltage accompagnied by an excess of sub-gap conductance.
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