Field Suppression of the Density-of-States: A Mechanism for Large Linear Magnetoresistance
D. P. Young, J. F. DiTusa, R. G. Goodrich, D. Hall, J. Anderson, S. Guo, Julia Y. Chan, P. W. Adams
Abstract
Hall, resistivity, magnetization, and thermoelectric power measurements were performed on single crystals of the highly anisotropic layered metal LaSb2. A 100-fold linear magnetoresistance (MR) was observed in fields up to 45 T, with no indication of saturation. We show that the MR is associated with a magnetic-field-dependent holelike carrier density, n(H) 1/H. The effect is orbital, depending upon the component of the magnetic field normal to the layers. At low temperature, a field of 9 T reduces the carrier density by more than an order of magnitude.
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