Fabrication of quantum point contacts by engraving GaAs/AlGaAs-heterostructures with a diamond tip
J. Regul, U. F. Keyser, M. Paesler, F. Hohls, U. Zeitler, R. J. Haug, A. Malave, E. Oesterschulze, D. Reuter, A. D. Wieck
Abstract
We use the all-diamond tip of an atomic force microscope for the direct engraving of high quality quantum point contacts in GaAs/AlGaAs-heterostructures. The processing time is shortened by two orders of magnitude compared to standard silicon tips. Together with a reduction of the line width to below 90 nm the depletion length of insulating lines is reduced by a factor of two with the diamond probes. The such fabricated defect free ballistic constrictions show well resolved conductance plateaus and the 0.7 anomaly in electronic transport measurements.
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