Role of spin-orbit coupling in the far infrared absorption of lateral semiconductor dots
Manuel Valin-Rodriguez, Antonio Puente, Llorens Serra
Abstract
We investigate the relevance of the spin-orit coupling to the far-infrared absorption of two-dimensional semiconductor dots. Varying the strength of the Dresselhaus term, a mechanism feasible in experiment by changing the dot width, distinctive splittings of the Kohn peak as well as additional low energy modes are predicted in a non-interacting model. Each mode has a spatial distribution of charge, perpendicular and in-plane spin densities that correlate in a peculiar way with the frequency and polarization of the external field. We study the robustness of these features against electron-electron interactions as well as the appearance of interaction-induced additional characteristics.
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