Coulomb Drag for Strongly Localized Electrons: Pumping Mechanism
M. E. Raikh, Felix von Oppen
Abstract
The mutual influence of two layers with strongly loclized electrons is exercised through the random Coulomb shifts of site energies in one layer caused by electron hops in the other layer. We trace how these shifts give rise to a voltage drop in the passive layer, when a current is passed through the active layer. We find that the microscopic origin of drag lies in the time correlations of the occupation numbers of the sites involved in a hop. These correlations are neglected within the conventional Miller-Abrahams scheme for calculating the hopping resistance.
Create a lesson
Related papers
Spin swapping mediated by spin-orbital textures in centrosymmetric multiorbital materials
Chengyuan Cai, Hanchen Wang, Rui-Chun Xiao et al.
Electrostatics of Chern junctions in a magnetic field
Robin Durand, Pascal Simon, Ion Garate
Spin Simulators based on Exciton-Polariton Waveguide Networks
Kevin Dini, Simone Zanotti, Timothy C. H. Liew
The quantized Hall effect knows which way the current flows: mirror covariance and rectification in a laterally asymmetric Hall bar
A. Siddiki
Floquet-Volkov spin polarization in spin-degenerate Antiferromagnets
Jiyang Fan, Dinghui Wang, Tongshuai Zhu
Gate-reconfigurable Josephson microwave source limited by thermal noise
Jayeon Kim, Seong Jang, Seunghan Lee et al.