Performance of a bipolar single electron device
Abstract
A small scale bipolar transistor with polysilicon emitter will, depending on the emitter window size, display suppression of the hole tramsport due to single electron effects. In this paper the resulting base current suppression is computed in terms of the orthodox theory of single electron tunneling and a recombination time approximation. The possible application of the transistor as readout system for Coulomb blockade device circuits is discussed.
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