Spin-dependent properties of a two-dimensional electron gas with ferromagnetic gates
C. Ciuti, J. P. McGuire, L. J. Sham
Abstract
A theoretical prediction of the spin-dependent electron self-energy and in-plane transport of a two-dimensional electron gas in proximity with a ferromagnetic gate is presented. The application of the predicted spin-dependent properties is illustrated by the proposal of a device configuration with two neighboring ferromagnetic gates which produces a magnetoresistance effect on the channel current generated by nonmagnetic source and drain contacts. Specific results are shown for a silicon inversion layer with iron gates. The gate leakage current is found to be beneficial to the spin effects.
Create a lesson
Related papers
Parametric Glassiness in Graphene-based Electronic Lévy Glass
Caue N. da Silva, Diego B. Fonseca, Adauto J. F. de Souza et al.
Giant geometric nonlinear transport in inhomogeneously strained Bi2Se3 single crystalline slabs
Igor Veremchuk, Pavlo Makushko, Anita Guarino et al.
Controlling the Atomic Reconstruction in Twisted MoSe2/WSe2 with a Monolayer hBN Spacer
Johannes Figueiredo, Kaiyuan Chen, Aubrey Penn et al.
Pulse-by-pulse imaging of reversible, collective reshaping in laser-excited gold nanorods
Mees Dieperink, Loriane Monin, Ichiro Ohnishi et al.
Atomic Edge Resonators Flatten Phonon Bands in Biphenylene Nanoribbons
V. L. Katkov, N. M. Chtchelkatchev, V. A. Osipov
Theory of exciton-exciton interactions in crystalline systems
L. Maisel Licerán, H. T. C. Stoof