Switching the magnetic configuration of a spin valve by current induced domain wall motion
J. Grollier, D. Lacour, V. Cros, A. Hamzic, A. Vaures, A. Fert, D. Adam, G. Faini
Abstract
We present experimental results on the displacement of a domain wall by injection of a dc current through the wall. The samples are 1 micron wide long stripes of a CoO/Co/Cu/NiFe classical spin valve structure. The stripes have been patterned by electron beam lithography. A neck has been defined at 1/3 of the total length of the stripe and is a pinning center for the domain walls, as shown by the steps of the giant magnetoresistance curves at intermediate levels (1/3 or 2/3) between the resistances corresponding to the parallel and antiparallel configurations. We show by electric transport measurements that, once a wall is trapped, it can be moved by injecting a dc current higher than a threshold current of the order of magnitude of 107 A/cm2. We discuss the different possible origins of this effect, i.e. local magnetic field created by the current and/or spin transfer from spin polarized current.
Create a lesson
Related papers
Role of defect trapping in the enhanced corrosion resistance of Ni-Mo alloys with yttrium and yttrium oxide additions
Jia-Hong Ke, Xinchang Zhang, Jingfan Yang et al.
Graphene-Confined Growth of Few-Layer PtSe2 via One-Step Selenization
Timea Ema Krajčovičová, Peter Kotrusz, Viera Skákalová et al.
DiffGA: Steering Frozen Diffusion Models for Materials Design via Evolutionary Search
Shivang Agarwal, Rodrigo Wang, Kevin Ryczko et al.
EpNet-Si: Atomic Form Factors Learned from Band Structures
Qiang Zhu
Investigation on Thermal Stability of Epi-GeSn Directly on Si (001)
Tharundev V, Dushyant Singh, Vigneshswari SR et al.
Pressure-Driven Evolution of the Physical Properties of Layered Y2GaB and Y2InB MAB Phases: A Comparative First-Principles Study
M. Rabi Us Sani Shapon, Md. Asif Afzal, Jubair Hossan Abir et al.