Ultrahigh field electron cyclotron resonance absorption in In1-xMnxAs films

Abstract

We have carried out an ultrahigh field cyclotron resonance study of n-type In1-xMnxAs films, with Mn composition x ranging from 0 to 12%, grown on GaAs by low temperature molecular beam epitaxy. We observe that the electron cyclotron resonance peak shifts to lower field with increasing x. A detailed comparison of experimental results with calculations based on a modified Pidgeon-Brown model allows us to estimate the s-d and p-d exchange coupling constants, α and β, for this important III-V dilute magnetic semiconductor system.

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