Ultrahigh field electron cyclotron resonance absorption in In1-xMnxAs films
M. A. Zudov, J. Kono, Y. H. Matsuda, T. Ikaida, N. Miura, H. Munekata, G. D. Sanders, Y. Sun, C. J. Stanton
Abstract
We have carried out an ultrahigh field cyclotron resonance study of n-type In1-xMnxAs films, with Mn composition x ranging from 0 to 12%, grown on GaAs by low temperature molecular beam epitaxy. We observe that the electron cyclotron resonance peak shifts to lower field with increasing x. A detailed comparison of experimental results with calculations based on a modified Pidgeon-Brown model allows us to estimate the s-d and p-d exchange coupling constants, α and β, for this important III-V dilute magnetic semiconductor system.
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