Superconductivity, critical current density, and flux pinning in MgB2-x(SiC)x/2 superconductor after SiC nanoparticle doping
S. X. Dou, A. V. Pan, S. Zhou, M. Ionescu, X. L. Wang, J. Horvat, H. K. Liu, P. R. Munroe
Abstract
We investigated the effect of SiC nano-particle doping on the crystal lattice structure, critical temperature Tc, critical current density Jc, and flux pinning in MgB2 superconductor. A series of MgB2-x(SiC)x/2 samples with x = 0 to 1.0 were fabricated using in-situ reaction process. The contraction of the lattice and depression of Tc with increasing SiC doping level remained rather small due to the counter-balanced effect of Si and C co-doping. The high level Si and C co-doping allowed the creation of intra-grain defects and highly dispersed nano-inclusions within the grains which can act as effective pinning centers for vortices, improving Jc behavior as a function of the applied magnetic field. The enhanced pinning is mainly attributable to the substitution-induced defects and a local structure fluctuations within grains. A pinning mechanism is proposed to account for different contributions of different defects in MgB2-x(SiC)x/2 superconductors.
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