Theory of the tunneling resonances of the bilayer electron systems in strong magnetic field
M. Abolfath, R. Khomeriki, K. Mullen
Abstract
We develop a theory for the anomalous interlayer conductance peaks observed in bilayer electron systems at nu=1. Our model shows the that the size of the peak at zero bias decreases rapidly with increasing in-plane magnetic field, but its location is unchanged. The I-V characteristic is linear at small voltages, in agreement with experimental observations. In addition we make quantitative predictions for how the inter-layer conductance peaks vary in position with in-plane magnetic field at high voltages. Finally, we predict novel bi-stable behavior at intermediate voltages.
Create a lesson
Related papers
Coherent and ultra-low-power EDSR with a flopping-mode spin qubit in germanium
Alexei Orekhov, Wonjin Jang, Pan Zhang et al.
Disorder-induced modulation of the nonlinear Hall effect in Weyl semimetals
Juan A. Cañas, Daniel A. Bonilla, A. Martín-Ruiz
Coplanar Lateral Gating MoS2 on SrTiO3: A Unified Platform for Classical and Quantum Devices
Prasad Muragesh, Manav Murali, Venkatesha Modur Ramachandra et al.
Predictive Structure to Thermal Conductivity Modeling Framework for BEOL Interconnect Stacks in Advanced Technology Nodes Enabled by Extensive Layer Resolved Thermal Measurements
Zifeng Huang, Yiyang Sun, Tianyu Jia et al.
Plasmons in twisted bilayer graphene across dispersive and flat bands
Antonio Palamara, Michele Pisarra, Antonello Sindona
Highly uniform first-electron position in qubit arrays fabricated on dedicated QSOI(R) 300mm commercial platform
Johan Pelloux-Prayer, Elise Prin, Giselle A. Elbaz et al.