Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode
P. Van Dorpe, V. F. Motsnyi, M. Nijboer, E. Goovaerts, V. I. Safarov, J. Das, W. Van Roy, G. Borghs, J. De Boeck
Abstract
We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations of at least 24% at 80K and 12% at room temperature.
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