Quantum Hall effect in a p-type heterojunction with a lateral surface quantum dot superlattice
V. Ya. Demikhovskii, D. V. Khomitskiy
Abstract
The quantization of Hall conductance in a p-type heterojunction with lateral surface quantum dot superlattice is investigated. The topological properties of the four-component hole wavefunction are studied both in r- and k-spaces. New method of calculation of the Hall conductance in a 2D hole gas described by the Luttinger Hamiltonian and affected by lateral periodic potential is proposed, based on the investigation of four-component wavefunction singularities in k-space. The deviations from the quantization rules for Hofstadter "butterfly" for electrons are found, and the explanation of this effect is proposed. For the case of strong periodic potential the mixing of magnetic subbands is taken into account, and the exchange of the Chern numbers between magnetic subands is discussed.
Create a lesson
Related papers
Coherent and ultra-low-power EDSR with a flopping-mode spin qubit in germanium
Alexei Orekhov, Wonjin Jang, Pan Zhang et al.
Disorder-induced modulation of the nonlinear Hall effect in Weyl semimetals
Juan A. Cañas, Daniel A. Bonilla, A. Martín-Ruiz
Coplanar Lateral Gating MoS2 on SrTiO3: A Unified Platform for Classical and Quantum Devices
Prasad Muragesh, Manav Murali, Venkatesha Modur Ramachandra et al.
Predictive Structure to Thermal Conductivity Modeling Framework for BEOL Interconnect Stacks in Advanced Technology Nodes Enabled by Extensive Layer Resolved Thermal Measurements
Zifeng Huang, Yiyang Sun, Tianyu Jia et al.
Plasmons in twisted bilayer graphene across dispersive and flat bands
Antonio Palamara, Michele Pisarra, Antonello Sindona
Highly uniform first-electron position in qubit arrays fabricated on dedicated QSOI(R) 300mm commercial platform
Johan Pelloux-Prayer, Elise Prin, Giselle A. Elbaz et al.