Role of finite layer thickness in spin-polarization of GaAs 2D electrons in strong parallel magnetic fields
E. Tutuc, S. Melinte, E. P. De Poortere, M. Shayegan, R. Winkler
Abstract
We report measurements and calculations of the spin-polarization, induced by a parallel magnetic field, of interacting, dilute, two-dimensional electron systems confined to GaAs/AlGaAs heterostructures. The results reveal the crucial role the non-zero electron layer thickness plays: it causes a deformation of the energy surface in the presence of a parallel field, leading to enhanced values for the effective mass and g-factor and a non-linear spin-polarization with field.
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