Monopolar Optical Orientation of Electronic Spins in Semiconductors
S. A. Tarasenko, E. L. Ivchenko, V. V. Bel'kov, S. D. Ganichev, D. Schowalter, Petra Schneider, M. Sollinger, W. Prettl, V. M. Ustinov, A. E. Zhukov, L. E. Vorobjev
Abstract
It is shown that absorption of circularly polarized infrared radiation due to intraband (Drude-like) transitions in n-type bulk semiconductors and due to intra-subband or inter-subband transitions in quantum well (QW) structures results in a monopolar spin orientation of free electrons. Spin polarization in zinc-blende-structure based QWs is demonstrated by the observation of the spin-galvanic and the circular photogalvanic effects. The monopolar spin orientation in n-type materials is shown to be possible if an admixture of valence band states to the conduction band wave function and the spin-orbit splitting of the valence band are taken into account.
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