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Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin splitting in high mobility GaAs/AlGaAs devices

R. G. Mani, J. H. Smet, K. von Klitzing, V. Narayanamurti, W. B. Johnson, V. Umansky

cond-mat.mes-hallarXiv:cond-mat/0303034

Abstract

We suggest an approach for characterizing the zero-field spin splitting of high mobility two-dimensional electron systems, when beats are not readily observable in the Shubnikov-de Haas effect. The zero-field spin splitting and the effective magnetic field seen in the reference frame of the electron is evaluated from a quantitative study of beats observed in radiation-induced magnetoresistance oscillations.

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