The enhancement of ferromagnetism in uniaxially stressed diluted magnetic semiconductors
Yu. G. Semenov, V. A. Stephanovich
Abstract
We predict a new mechanism of enhancement of ferromagnetic phase transition temperature Tc in uniaxially stressed diluted magnetic semiconductors (DMS) of p-type. Our prediction is based on comparative studies of both Heisenberg (inherent to undistorted DMS with cubic lattice) and Ising (which can be applied to strongly enough stressed DMS) models in a random field approximation permitting to take into account the spatial inhomogeneity of spin-spin interaction. Our calculations of phase diagrams show that area of parameters for existence of DMS-ferromagnetism in Ising model is much larger than that in Heisenberg model.
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