Enhancement of Curie temperature in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As ferromagnetic heterostructures by Be modulation doping
T. Wojtowicz, W. L. Lim, X. Liu, M. Dobrowolska, J. K. Furdyna, K. M. Yu, W. Walukiewicz, I. Vurgaftman, J. R. Meyer
Abstract
The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to an increase of the Curie temperature TC of Ga(1-x)Mn(x)As, from 70 K in undoped structures to over 100 K with the modulation doping. This increase is qualitatively consistent with a multi-band mean field theory simulation of carrier-mediated ferromagnetism. An important feature is that the increase of TC occurs only in those structures where the modulation doping is introduced after the deposition of the magnetic layer, but not when the Be-doped layer is grown first. This behavior is expected from the strong sensitivity of Mn interstitial formation to the value of the Fermi energy during growth.
Create a lesson
Related papers
From picometre displacements to a three-dimensional lattice gas of polar skyrmions
Joohee Bang, Nives Strkalj, Hugo Aramberri et al.
Coherent and Incoherent Time-Resolved Diffuse Scattering Intensity from First Principles
Matteo Furci, Giovanni Marini, Stefano Mocatti et al.
VoroTypes: automated enumeration of Voronoi cell topologies for structural identification of complex crystals in atomistic simulations
Emanuel A. Lazar, Chris H. Rycroft
Large in-plane optical anisotropy in epitaxial CrN(113) films
Duc V. Dinh, Frank Peiris, Oliver Brandt
Coexistence of Altermagnetic and Compensated Ferrimagnetic Motifs in a Noncollinear Multiferroic
Vikrant Chaudhary, Fu Li, Hui Liu et al.
Low magnon damping of a EuSe film down to millikelvin temperatures
Rostyslav O. Serha, Jan Hofer, Khrystyna O. Levchenko et al.